powersem gmbh, walpersdorfer str. 53 91126 d- schwabach, germany www.powersem.net phone: 09122 - 9764-0 fax.: 09122 - 9764-20 powersem reserves the right to change limits, test conditions and dimensions three phase psd 162 i davm = 175 a rectifier bridges v rrm = 800-1800 v preliminary data sheet v rsm v v rrm v type 800 800 psd 162/08 1200 1200 psd 162/12 1400 1400 psd 162/14 1600 1600 psd 162/16 1800 1800 psd 162/18 symbol test conditions maximum ratings i davm t c = 100c, module 175 a i fsm t vj = 45c t = 10 ms (50 hz), sine 1800 a v r = 0 t = 8.3 ms (60 hz), sine 1950 a t vj = t vjm t = 10 ms (50 hz), sine 1600 a v r = 0 t = 8.3 ms (60 hz), sine 1800 a i 2 dt t vj = 45c t = 10 ms (50 hz), sine 16200 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 16200 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 12800 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 13400 a 2 s t vj -40 ... + 150 c t vjm 150 c t stg -40 ... + 125 c v isol 50/60 hz, rms t = 1 min 2500 v i isol 1 ma t = 1 s 3000 v m d mounting torque (m6) 5 nm terminal connection torque (m6) 5 nm weight typ. 270 g symbol test conditions characteristic value i r v r = v rrm t vj = 25c 0.3 ma v r = v rrm t vj = t vjm 5 ma v f i f = 150 a t vj = 25c 1.55 v v to for power-loss calculations only 0.8 v r t t vj = t vjm 3 m ? r thjc per diode; dc current 0.65 k/w per module 0.108 k/w r thjk per diode; dc current 0.83 k/w per module 0.138 k/w d s creeping distance on surface 10.0 mm d a creeping distance in air 9.4 mm a max. allowable acceleration 50 m/s 2 features ? package with screw terminals ? isolation voltage 3000 v ? planar glasspassivated chips ? blocking voltage up to 1800 v ? low forward voltage drop ? ul registered e 148688 applications ? s upplies for dc power equipment ? i nput rectifiers for pwm inverter ? b attery dc power supplies ? f ield supply for dc motors advantages ? easy to mount with two screws ? space and weight savings ? improved temperature and power cycling package, style and outline dimensions in mm (1mm = 0.0394?)
psd 162 0.5 1 1.5 2 0 50 100 1 50 200 2 50 300 v f [ v ] i f [ a ] t vj = 150c t vj = 25c 0.4 0.6 0.8 1 1.2 1.4 1.6 10 0 10 1 10 2 10 3 t[ms] i (a) fsm tvj=45c tvj=150c 1800 1600 i ------ i fsm f(ov) 0 v rrm 1/2 v rrm 1 v rrm 2 4 6 10 tvj=45c tvj=150c t [ms] 1 10 10 10 3 4 5 as 2 fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current per diode i fsm : crest value. t: duration fig. 3 i 2 dt versus time (1-10ms) per diode (or thyristor) 175 125 75 25 0 100 200 300 400 500 600 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 150 tc c dc sin.180 rec.120 rec.60 rec.30 0.87 0.37 0.2 0.12 0.08 0.04 = rthca [k/w] ifavm [a] tamb [k] 0 50 100 150 [w] pvtot psd 162 fig. 4 power dissipation versus direct output current and ambient tem p erature 50 100 150 200 0 25 50 75 100 125 150 200 dc sin.180 rec.120 rec.60 rec.30 t (c) c i dav [a] fig.5 maximum forward current at case tem p erature 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 k/w z th t[s] z thjk z thjc fig. 6 transient thermal impedance per diode (or thyristor), calculated
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